Molecular beam epitaxy now enables the growth of nanowire heterostructures composed of a semiconducting core and a metallic epitaxial shell. Molecular beam epitaxy describes a technique in widespread use for the production of highquality semiconductor devices. Molecular beam epitaxy mbe is an elegant material growth technique that is most simply described as a very refined form of vacuum evaporation or physical vapor deposition, with exquisite control. It discusses the most important aspects of the mbe apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the. Molecular beam epitaxy key papers in applied physics by alfred y. Molecular beam epitaxy of catalyst free inas nanowires on.
Cho and a great selection of related books, art and collectibles available now at. Thermodynamics free energy minimization growth kinetics various atomic rate processes. Fundamentals of epitaxial growth selforganized growth of. From research to mass production, second edition, provides a comprehensive overview of the latest mbe research and applications in epitaxial growth, along with a detailed discussion and how to on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. Growth of selfassembled nanostructures by molecular beam epitaxy article pdf available in current science 847. Molecular beam epitaxy fundamentals and current status. Materials fundamentals of molecular beam epitaxy free ebook pdf. Fundamentals and current status springer series in materials science marian a herman on. Fundamentals and current status springer series in materials science marian a. Molecular beam epitaxy low growth rate of 1 monolayer lattice plane per sec low growth temperature 550c for gaas smooth growth surface with steps of atomic height and large flat terraces precise control of surface composition and morphology abrupt variation of chemical composition at interfaces. The techniques addressed in the book can be deployed.
In contrast, techniques which are essentially free from this disadvantage, such as molecular beam epitaxy mbe, have to. Index ab initio calculations, 145 abrupt interface, 194 abruptness, 195 active oxidation, 36, 49 adsorption of water on siloo, 1 agglomeration, 151, 155. Condenses fundamental science of mbe into a modern reference, speeding up literature. Pdf molecular beam epitaxy mbe represents a widely used growth. Fundamentals and current status springer series in materials science. Molecular beam epitaxy of highquality gaas and algaas 1. Current understanding of thin film growth thin film growth is a nonequilibrium process. Materials fundamentals of molecular beam epitaxy ebook. However, the current approaches for the nanopatterning are mainly based on electron beam lithography e beam, which is. A specific growth mode is an interplay between thermodynamics and growth kinetics. However, these properties have been so far explored only for structures produced by techniques inducing considerable largescale inhomogeneity.
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